IXGK120N60B

new-10%

Manufacturer part number:IXGK120N60B

Manufacturer:IXYS

Description:IGBT 600V 200A 660W TO264AA

Case Package:SOT-23

Datasheet:IXGK120N60B Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFAST™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	660W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*120N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	660W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	200A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	120 ns
Test Condition	480V, 100A, 2.4 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 120A
Turn Off Time-Nom (toff)	540 ns
IGBT Type	PT
Gate Charge	350nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	60ns/200ns
Switching Energy	2.4mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	280ns
RoHS Status	RoHS Compliant