HGTP20N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
HGTP20N60A4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
44 Weeks
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Voltage - Rated DC
600V
Max Power Dissipation
290W
Current Rating
70A
Number of Elements
1
Element Configuration
Single
Power Dissipation
290W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
15 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
73 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
70A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
28 ns
Test Condition
390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Continuous Collector Current
70A
Turn Off Time-Nom (toff)
160 ns
Gate Charge
142nC
Current - Collector Pulsed (Icm)
280A
Td (on/off) @ 25°C
15ns/73ns
Switching Energy
105μJ (on), 150μJ (off)
Height
9.4mm
Length
10.67mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.235536
$1.235536
10
$1.165600
$11.656
100
$1.099623
$109.9623
500
$1.037380
$518.69
1000
$0.978660
$978.66
HGTP20N60A4 Product Details
HGTP20N60A4 Description
The HGTG20N60A4 and HGTP20N60A4 are two variants of the same gene. The best features of a MOSFET with a high input impedance and the A bipolar transistor with a low on-state conduction loss. Many high-voltage switching applications benefit from IGBTs. high-frequency operation with low conduction losses is necessary. This device has been designed to be quick. UPS, welder, and induction applications are examples of switching applications. heating.
HGTP20N60A4 Features
Low Conduction Loss
40 A, 600 V @ TC = 110°C
Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 A