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HGTP20N60A4

  • HGTP20N60A4
  • HGTP20N60A4

HGTP20N60A4

HGTP20N60A4

ON Semiconductor

HGTP20N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTP20N60A4 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 290W
Current Rating 70A
Number of Elements 1
Element Configuration Single
Power Dissipation 290W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 73 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 70A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 28 ns
Test Condition 390V, 20A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A
Continuous Collector Current 70A
Turn Off Time-Nom (toff) 160 ns
Gate Charge 142nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 15ns/73ns
Switching Energy 105μJ (on), 150μJ (off)
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.235536 $1.235536
10 $1.165600 $11.656
100 $1.099623 $109.9623
500 $1.037380 $518.69
1000 $0.978660 $978.66
HGTP20N60A4 Product Details

HGTP20N60A4 Description


The HGTG20N60A4 and HGTP20N60A4 are two variants of the same gene. The best features of a MOSFET with a high input impedance and the A bipolar transistor with a low on-state conduction loss. Many high-voltage switching applications benefit from IGBTs. high-frequency operation with low conduction losses is necessary. This device has been designed to be quick. UPS, welder, and induction applications are examples of switching applications. heating.



HGTP20N60A4 Features


  • Low Conduction Loss

  • 40 A, 600 V @ TC = 110°C

  • Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 20 A

  • Typical Fall Time............55ns at TJ = 125°C



HGTP20N60A4 Applications


  • UPS

  • Welder

  • Other industries

  • Fash switching application


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