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IXGM20N60A

IXGM20N60A

IXGM20N60A

IXYS

Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-204AE

SOT-23

IXGM20N60A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AE
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Terminal Position BOTTOM
Terminal Form PIN/PEG
JESD-30 Code O-MBFM-P2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Reverse Recovery Time 200ns
Current - Collector (Ic) (Max) 40A
Power Dissipation-Max (Abs) 150W
Turn On Time 300 ns
Test Condition 480V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 1150 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 100ns/600ns
Switching Energy 2mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 3 V
Gate-Emitter Thr Voltage-Max 5V
Power Dissipation Ambient-Max 150W
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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