IXGN200N60B3

new-10%

Manufacturer part number:IXGN200N60B3

Manufacturer:IXYS

Description:IGBT MOD 600V 300A 830W SOT227B

Case Package:SOT-23

Datasheet:IXGN200N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2009
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	UL RECOGNIZED, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	830W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	IXG*200N60
Pin Count	4
Number of Elements	1
Configuration	Single
Power Dissipation	830W
Case Connection	ISOLATED
Turn On Delay Time	44 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	310 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	300A
Current - Collector Cutoff (Max)	50μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.35V
Input Capacitance	26nF
Turn On Time	122 ns
Vce(on) (Max) @ Vge, Ic	1.5V @ 15V, 100A
Turn Off Time-Nom (toff)	730 ns
IGBT Type	PT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	26nF @ 25V
VCEsat-Max	1.5 V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free