Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	2.299997g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*16N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	3V
Turn On Time	43 ns
Test Condition	400V, 12A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 12A
Turn Off Time-Nom (toff)	190 ns
IGBT Type	PT
Gate Charge	25nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	16ns/75ns
Switching Energy	160μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	RoHS Compliant

IXGP16N60C2

Related Part Number