STGW50H60DF

new-10%

Manufacturer part number:STGW50H60DF

Manufacturer:STMicroelectronics

Description:STGW50H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW50H60DF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	360W
Base Part Number	STGW50
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	62 ns
Power - Max	360W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	205 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	100A
Reverse Recovery Time	55 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	91 ns
Test Condition	400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 50A
Turn Off Time-Nom (toff)	285 ns
IGBT Type	Trench Field Stop
Gate Charge	217nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	62ns/178ns
Switching Energy	890μJ (on), 860μJ (off)
Gate-Emitter Voltage-Max	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free