IXGT20N60BD1

new-10%

Manufacturer part number:IXGT20N60BD1

Manufacturer:IXYS

Description:Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-268AA

Case Package:SOT-23

Datasheet:IXGT20N60BD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Weight	4.500005g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFAST™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N60
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	25 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	15 ns
Test Condition	480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Turn Off Time-Nom (toff)	220 ns
Gate Charge	55nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	15ns/110ns
Switching Energy	700μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	150ns
RoHS Status	RoHS Compliant