APT100GN60LDQ4G

new-10%

Manufacturer part number:APT100GN60LDQ4G

Manufacturer:Microsemi Corporation

Description:IGBT 600V 229A 625W TO264

Case Package:SOT-23

Datasheet:APT100GN60LDQ4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Weight	10.6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	625W
Current Rating	100A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	229A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Turn On Time	96 ns
Test Condition	400V, 100A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 100A
Continuous Collector Current	229A
Turn Off Time-Nom (toff)	435 ns
IGBT Type	Trench Field Stop
Gate Charge	600nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	31ns/310ns
Switching Energy	4.75mJ (on), 2.675mJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Height	5.21mm
Length	26.49mm
Width	20.5mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free