IXGT72N60A3

new-10%

Manufacturer part number:IXGT72N60A3

Manufacturer:IXYS

Description:IGBT 600V 75A 540W TO268

Case Package:SOT-23

Datasheet:IXGT72N60A3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	GenX3™, XPT™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	540W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*72N60
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	540W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.35V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Turn On Time	61 ns
Test Condition	480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.35V @ 15V, 60A
Turn Off Time-Nom (toff)	885 ns
IGBT Type	PT
Gate Charge	230nC
Current - Collector Pulsed (Icm)	400A
Td (on/off) @ 25°C	31ns/320ns
Switching Energy	1.38mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant