BUZ31HXKSA1

new-10%

Manufacturer part number:BUZ31HXKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 Tube

Case Package:SOT-23

Datasheet:BUZ31HXKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	SIPMOS®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	95W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	95W
Turn On Delay Time	12 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14.5A Tc
Rise Time	50ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	14.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.2Ohm
Pulsed Drain Current-Max (IDM)	58A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	200 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant