IXSH30N60AU1

new-10%

Manufacturer part number:IXSH30N60AU1

Manufacturer:IXYS

Description:IGBT 600V 50A 200W TO247

Case Package:SOT-23

Datasheet:IXSH30N60AU1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*30N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	50A
Reverse Recovery Time	50 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	190 ns
Test Condition	480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 30A
Turn Off Time-Nom (toff)	680 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	60ns/400ns
Switching Energy	2.5mJ (off)
Gate-Emitter Voltage-Max	20V
VCEsat-Max	3 V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	RoHS Compliant
Lead Free	Lead Free