IXSH30N60U1

new-10%

Manufacturer part number:IXSH30N60U1

Manufacturer:IXYS

Description:IGBT 600V 50A 200W TO247

Case Package:SOT-23

Datasheet:IXSH30N60U1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*30N60
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	50A
Reverse Recovery Time	50 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	190 ns
Test Condition	480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	1140 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	100A
Td (on/off) @ 25°C	60ns/400ns
Switching Energy	2.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
RoHS Status	RoHS Compliant