STGW35NC120HD

new-10%

Manufacturer part number:STGW35NC120HD

Manufacturer:STMicroelectronics

Description:STGW35NC120HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGW35NC120HD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	235W
Base Part Number	STGW35
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	29 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	275 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	58A
Reverse Recovery Time	152 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	60A
Turn On Time	41 ns
Test Condition	960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 20A
Turn Off Time-Nom (toff)	928 ns
Gate Charge	110nC
Current - Collector Pulsed (Icm)	135A
Td (on/off) @ 25°C	29ns/275ns
Switching Energy	1.66mJ (on), 4.44mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	5.75V
Height	21.09mm
Length	16.03mm
Width	5.16mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free