IRGB4045DPBF

new-10%

Manufacturer part number:IRGB4045DPBF

Manufacturer:Infineon Technologies

Description:IRGB4045DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGB4045DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	77W
Number of Elements	1
Element Configuration	Single
Power Dissipation	77W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	27 ns
Transistor Application	POWER CONTROL
Rise Time	11ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	75 ns
Collector Emitter Voltage (VCEO)	2V
Max Collector Current	12A
Reverse Recovery Time	74 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	38 ns
Test Condition	400V, 6A, 47 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 6A
Turn Off Time-Nom (toff)	127 ns
IGBT Type	Trench
Gate Charge	13nC
Current - Collector Pulsed (Icm)	18A
Td (on/off) @ 25°C	27ns/75ns
Switching Energy	56μJ (on), 122μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	22ns
Height	9.02mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free