IXSK30N60CD1

new-10%

Manufacturer part number:IXSK30N60CD1

Manufacturer:IXYS

Description:IGBT 600V 55A 200W TO264

Case Package:SOT-23

Datasheet:IXSK30N60CD1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	HIGH SPEED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXS*30N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	200W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	55A
Reverse Recovery Time	35 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	70 ns
Test Condition	480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 30A
Turn Off Time-Nom (toff)	290 ns
Gate Charge	100nC
Current - Collector Pulsed (Icm)	110A
Td (on/off) @ 25°C	30ns/90ns
Switching Energy	700μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7V
Fall Time-Max (tf)	270ns
RoHS Status	RoHS Compliant