Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Base Part Number	IXS*50N60
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.7V
Max Collector Current	75A
Reverse Recovery Time	50 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	70 ns
Test Condition	480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 50A
Turn Off Time-Nom (toff)	340 ns
Gate Charge	190nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	70ns/200ns
Switching Energy	6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	8V
Fall Time-Max (tf)	600ns
RoHS Status	RoHS Compliant

IXSX50N60AU1

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