IXGH35N120C

new-10%

Manufacturer part number:IXGH35N120C

Manufacturer:IXYS

Description:IGBT 1200V 70A 300W TO247AD

Case Package:SOT-23

Datasheet:IXGH35N120C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	Lightspeed™
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	LOW SWITCHING LOSSES
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*35N120
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	300W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4V
Max Collector Current	70A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	86 ns
Test Condition	960V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 35A
Turn Off Time-Nom (toff)	480 ns
Gate Charge	170nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	50ns/150ns
Switching Energy	3mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	RoHS Compliant
Lead Free	Lead Free