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IRG6I330U-168P

  • IRG6I330U-168P
  • IRG6I330U-168P

IRG6I330U-168P

IRG6I330U-168P

Infineon Technologies

IRG6I330U-168P datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG6I330U-168P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 43W
Base Part Number IRG6I330UPBF
Power Dissipation 43W
Input Type Standard
Power - Max 43W
Collector Emitter Voltage (VCEO) 1.55V
Max Collector Current 28A
Collector Emitter Breakdown Voltage 330V
Voltage - Collector Emitter Breakdown (Max) 330V
Current - Collector (Ic) (Max) 28A
Collector Emitter Saturation Voltage 1.55V
Vce(on) (Max) @ Vge, Ic 1.55V @ 15V, 28A
RoHS Status RoHS Compliant
IRG6I330U-168P Product Details

IRG6I330U-168P Description


IRG6I330U-168P developed by Infineon Technologies is a type of PDP trench IGBT specifically optimized for applications in Plasma Display Panels. It is designed based on advanced trench IGBT technology to achieve low VCE(on) and low Epulse rating per silicon area, so as to improve panel efficiency. Moreover, it is able to deliver 150℃ operating junction temperature and high repetitive peak current capability. All these characteristics make the IRG6I330U-168P well suited for PDP applications.



IRG6I330U-168P Features


150℃ operating junction temperature

High repetitive peak current capability

Low VCE(on)

Low Epulse rating per silicon area



IRG6I330U-168P Applications


PDP applications


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