IXTA02N250HV

new-10%

Manufacturer part number:IXTA02N250HV

Manufacturer:IXYS

Description:MOSFET N-CH 2500V 0.2A TO263

Case Package:SOT-23

Datasheet:IXTA02N250HV Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.770002g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450 Ω @ 50mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	116pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Tc
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 10V
Rise Time	19ns
Drain to Source Voltage (Vdss)	2500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	2.5kV
Pulsed Drain Current-Max (IDM)	0.6A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free