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IXTA02N450HV

IXTA02N450HV

IXTA02N450HV

IXYS

Trans MOSFET N-CH 4.5KV 0.2A 3-Pin(2+Tab) TO-263

SOT-23

IXTA02N450HV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 113W Tc
Element Configuration Single
Power Dissipation 113W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 48ns
Drain to Source Voltage (Vdss) 4500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 143 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 4.5kV
RoHS Status RoHS Compliant

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