IXTA1R4N100PTRL

new-10%

Manufacturer part number:IXTA1R4N100PTRL

Manufacturer:IXYS

Description:DISC MOSFET N-CH STD-POLAR TO-26

Case Package:SOT-23

Datasheet:IXTA1R4N100PTRL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	63W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11.8 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.4A Tc
Gate Charge (Qg) (Max) @ Vgs	17.8nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V