PSMN3R0-60ES,127

new-10%

Manufacturer part number:PSMN3R0-60ES,127

Manufacturer:Nexperia USA Inc.

Description:PSMN3R0-60ES - N-channel 60 V 3.0 mO standard level MOSFET in I2PAK.

Case Package:SOT-23

Datasheet:PSMN3R0-60ES,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	306W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	306W
Case Connection	DRAIN
Turn On Delay Time	31 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8079pF @ 30V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	22 ns
Turn-Off Delay Time	77 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	824A
Avalanche Energy Rating (Eas)	800 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free