IXFQ28N60P3

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Manufacturer part number:IXFQ28N60P3

Manufacturer:IXYS

Description:MOSFET N-CH 600V 28A TO3P

Case Package:SOT-23

Datasheet:IXFQ28N60P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	695W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	695W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	3560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	48 ns
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.26Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	70A
Avalanche Energy Rating (Eas)	500 mJ
Height	20.3mm
Length	15.8mm
Width	4.9mm
RoHS Status	ROHS3 Compliant