IPD80R2K0P7ATMA1 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 6 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 175pF @ 500V is its maximum input capacitance.Peak drain current is 6A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 800V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD80R2K0P7ATMA1 Features

the avalanche energy rating (Eas) is 6 mJ
based on its rated peak drain current 6A.
a 800V drain to source voltage (Vdss)

IPD80R2K0P7ATMA1 Applications

There are a lot of Infineon Technologies
IPD80R2K0P7ATMA1 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies