IXTA60N20T

new-10%

Manufacturer part number:IXTA60N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 60A TO-263

Case Package:SOT-23

Datasheet:IXTA60N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Packaging	Tube
Published	2010
Series	Trench™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	73nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	60A
JEDEC-95 Code	TO-263AA
Drain-source On Resistance-Max	0.04Ohm
Pulsed Drain Current-Max (IDM)	150A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	700 mJ
RoHS Status	ROHS3 Compliant