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IXTA98N075T

IXTA98N075T

IXTA98N075T

IXYS

MOSFET N-CH 75V 98A TO-263

SOT-23

IXTA98N075T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 100μA
Current - Continuous Drain (Id) @ 25°C 98A Tc
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 98A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 600 mJ
Drain to Source Resistance 10mOhm
RoHS Status RoHS Compliant

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