SPD11N10

new-10%

Manufacturer part number:SPD11N10

Manufacturer:Infineon Technologies

Description:SPD11N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPD11N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	10.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	50W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	170m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 21μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10.5A Tc
Gate Charge (Qg) (Max) @ Vgs	18.3nC @ 10V
Rise Time	46ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	10.5A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	60 mJ
RoHS Status	RoHS Compliant