IRF7201PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7201PBF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
30m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.3A Tc
Gate Charge (Qg) (Max) @ Vgs
28nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
7.3A
Drain-source On Resistance-Max
0.03Ohm
Pulsed Drain Current-Max (IDM)
58A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
70 mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,800
$0.30649
$0.91947
IRF7201PBF Product Details
IRF7201PBF Description
IRF7201PBF is a leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package. The HEXFET? power MOSFETs from International Rectifier feature advanced processing techniques for extremely low on-resistance per silicon area.
In addition to the fast switching speed and ruggedized design of HEXFET MOSFETs, this benefit makes these devices extremely efficient and reliable across a wide range of applications.