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IXTC160N10T

IXTC160N10T

IXTC160N10T

IXYS

MOSFET N-CH 100V 83A ISOPLUS220

SOT-23

IXTC160N10T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS220™
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchMV™
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection ISOLATED
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 83A Tc
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Rise Time 61ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 83A
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 500 mJ
RoHS Status RoHS Compliant

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