SQ1470EH-T1-GE3

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Manufacturer part number:SQ1470EH-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 2.8A SC70

Case Package:SOT-23

Datasheet:SQ1470EH-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	SC-70-6 (SOT-363)
Packaging	Digi-Reel®
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.3W
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.3W
Turn On Delay Time	8 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	65mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id	1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 4.5V
Rise Time	13ns
Drain to Source Voltage (Vdss)	30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	2.8A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
Input Capacitance	610pF
Drain to Source Resistance	65mOhm
Rds On Max	65 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant