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FQD4P40TM-AM002

FQD4P40TM-AM002

FQD4P40TM-AM002

ON Semiconductor

MOSFET P-CH 400V 2.7A

SOT-23

FQD4P40TM-AM002 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 3.1Ohm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 2.5W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3.1 Ω @ 1.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 37 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage -400V
RoHS Status RoHS Compliant

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