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FDS6672A

FDS6672A

FDS6672A

ON Semiconductor

FDS6672A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS6672A Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2001
Series PowerTrench®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12.5A Ta
Gate Charge (Qg) (Max) @ Vgs 46nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
In-Stock:5292 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.031304$1.031304
10$0.972929$9.72929
100$0.917858$91.7858
500$0.865903$432.9515
1000$0.816890$816.89

FDS6672A Product Details

FDS6672A Description


FDS6672A is a 30v N-Channel PowerTrench MOSFET. This N-Channel MOSFET FDS6672A has been designed specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional switching PWM controllers. The Infineon FDS6672A has been optimized for low gate charge, low RDS(ON), and fast switching speed.



FDS6672A Features


  • 12.5 A, 30 V. RDS(ON) = 8 m? @ VGS = 10 V

  • RDS(ON) = 9.5 m? @ VGS = 4.5 V

  • High-performance trench technology for extremely low RDS(ON)

  • Low gate charge (33 nC typical)

  • High power and current handling



FDS6672A Applications


  • Cellular phones

  • Laptop computers

  • Photovoltaic systems

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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