FDS6672A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDS6672A Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SOIC
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5070pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12.5A Ta
Gate Charge (Qg) (Max) @ Vgs
46nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±12V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.031304
$1.031304
10
$0.972929
$9.72929
100
$0.917858
$91.7858
500
$0.865903
$432.9515
1000
$0.816890
$816.89
FDS6672A Product Details
FDS6672A Description
FDS6672A is a 30v N-Channel PowerTrench MOSFET. This N-Channel MOSFET FDS6672A has been designed specifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional switching PWM controllers. The Infineon FDS6672A has been optimized for low gate charge, low RDS(ON), and fast switching speed.
FDS6672A Features
12.5 A, 30 V. RDS(ON) = 8 m? @ VGS = 10 V
RDS(ON) = 9.5 m? @ VGS = 4.5 V
High-performance trench technology for extremely low RDS(ON)
Low gate charge (33 nC typical)
High power and current handling
FDS6672A Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator