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IXTH24P20

IXTH24P20

IXTH24P20

IXYS

MOSFET (Metal Oxide) P-Channel Tube 150m Ω @ 500mA, 10V ±20V 4200pF @ 25V 150nC @ 10V 200V TO-247-3

SOT-23

IXTH24P20 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 150mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -24A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 29ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Pulsed Drain Current-Max (IDM) 96A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.800192 $9.800192
10 $9.245464 $92.45464
100 $8.722136 $872.2136
500 $8.228430 $4114.215
1000 $7.762670 $7762.67
IXTH24P20 Product Details

IXTH24P20 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4200pF @ 25V.This device conducts a continuous drain current (ID) of 24A, which is the maximum continuous current transistor can conduct.Using VGS=-200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -200V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 68 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 96A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXTH24P20 Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 96A.
a 200V drain to source voltage (Vdss)


IXTH24P20 Applications


There are a lot of IXYS
IXTH24P20 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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