IXTH50N30

new-10%

Manufacturer part number:IXTH50N30

Manufacturer:IXYS

Description:MOSFET N-CH 300V 50A TO-247

Case Package:SOT-23

Datasheet:IXTH50N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Technology	MOSFET (Metal Oxide)
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	400W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	165nC @ 10V
Rise Time	33ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	300V
Pulsed Drain Current-Max (IDM)	200A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant