IXTH50P085

new-10%

Manufacturer part number:IXTH50P085

Manufacturer:IXYS

Description:MOSFET P-CH 85V 50A TO-247AD

Case Package:SOT-23

Datasheet:IXTH50P085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
ECCN Code	EAR99
Resistance	55MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	-85V
Technology	MOSFET (Metal Oxide)
Current Rating	-50A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	39ns
Drain to Source Voltage (Vdss)	85V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	86 ns
Continuous Drain Current (ID)	50A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-85V
Pulsed Drain Current-Max (IDM)	200A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free