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IXTH58N25L2

  • IXTH58N25L2
  • IXTH58N25L2

IXTH58N25L2

IXTH58N25L2

IXYS

DISC MOSFET N-CH LINEAR L2 TO-24

SOT-23

IXTH58N25L2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 540W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 64m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $23.21000 $23.21
500 $22.9779 $11488.95
1000 $22.7458 $22745.8
1500 $22.5137 $33770.55
2000 $22.2816 $44563.2
2500 $22.0495 $55123.75

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