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MCB60I1200TZ-TUB

  • MCB60I1200TZ-TUB
  • MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

MCB60I1200TZ-TUB

IXYS

SICARBIDE-DISCRETE MOSFET TO-268

SOT-23

MCB60I1200TZ-TUB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature -40°C~175°C TJ
Part Status Active
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 34m Ω @ 50A, 20V
Vgs(th) (Max) @ Id 4V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 2790pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 160nC @ 20V
Drain to Source Voltage (Vdss) 1.2kV
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +20V, -5V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $104.335000 $104.335
10 $98.429245 $984.29245
100 $92.857779 $9285.7779
500 $87.601678 $43800.839
1000 $82.643092 $82643.092

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