IXTH5N100A

new-10%

Manufacturer part number:IXTH5N100A

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 5A TO247AD

Case Package:SOT-23

Datasheet:IXTH5N100A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Resistance	2.4Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Current Rating	5A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	180W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	180W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	5A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	20A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free