IXTK200N10L2

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Manufacturer part number:IXTK200N10L2

Manufacturer:IXYS

Description:IXTK200N10L2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from IXYS stock available on our website

Case Package:SOT-23

Datasheet:IXTK200N10L2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	Linear L2™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1040W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200A Tc
Gate Charge (Qg) (Max) @ Vgs	540nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	200A
Drain-source On Resistance-Max	0.011Ohm
Pulsed Drain Current-Max (IDM)	500A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free