NTHD5904NT1G

new-10%

Manufacturer part number:NTHD5904NT1G

Manufacturer:ON Semiconductor

Description:MOSFET 20V 4.5A Dual N-Channel

Case Package:SOT-23

Datasheet:NTHD5904NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
Current Rating	3.3A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Qualification Status	Not Qualified
Number of Elements	2
Power Dissipation-Max	640mW Ta
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.13W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	465pF @ 16V
Current - Continuous Drain (Id) @ 25°C	2.5A Ta
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	17 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.065Ohm
Drain to Source Breakdown Voltage	20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free