IXTK33N50

new-10%

Manufacturer part number:IXTK33N50

Manufacturer:IXYS

Description:MOSFET N-CH 500V 33A TO-264

Case Package:SOT-23

Datasheet:IXTK33N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	170mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	416W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	416W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	170m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	33A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	500V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free