NTD4960N-35G

new-10%

Manufacturer part number:NTD4960N-35G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 11.1A IPAK

Case Package:SOT-23

Datasheet:NTD4960N-35G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8MOhm
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.07W Ta 35.71W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.68W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 15V
Current - Continuous Drain (Id) @ 25°C	8.9A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	55A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8.9A
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	51.2 mJ
Height	6.35mm
Length	6.73mm
Width	2.38mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free