IXTK5N250 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 8560pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.As shown in the table below, the drain current of this device is 5A.There is no pulsed drain current maximum for this device based on its rated peak drain current 20A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 2500V.The drain-to-source voltage (Vdss) of this transistor needs to be at 2500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXTK5N250 Features

the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 5A
based on its rated peak drain current 20A.
a 2500V drain to source voltage (Vdss)

IXTK5N250 Applications

There are a lot of IXYS
IXTK5N250 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,