RUM002N02T2L

new-10%

Manufacturer part number:RUM002N02T2L

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 20V 0.2A VMT3

Case Package:SOT-23

Datasheet:RUM002N02T2L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Copper, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-723
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.2 Ω @ 200mA, 2.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	1.2V 2.5V
Vgs (Max)	±8V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	200mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	1.4Ohm
Drain to Source Breakdown Voltage	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free