TP5335K1-G

new-10%

Manufacturer part number:TP5335K1-G

Manufacturer:Microchip Technology

Description:Mosfet, P-channel Enhancement-mode, -350V, 30 Ohm 3 SOT-23 1.3MM T/r

Case Package:SOT-23

Datasheet:TP5335K1-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	LOW THRESHOLD
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360mW
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 25V
Current - Continuous Drain (Id) @ 25°C	85mA Tj
Rise Time	15ns
Drain to Source Voltage (Vdss)	350V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	-85mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.085A
Drain to Source Breakdown Voltage	-350V
Max Junction Temperature (Tj)	150°C
Feedback Cap-Max (Crss)	22 pF
Height	1.12mm
RoHS Status	ROHS3 Compliant