STD17NF03LT4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STD17NF03LT4 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
50mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
17A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD17
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
30W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
50m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 5V
Rise Time
100ns
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
1.5V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
68A
Avalanche Energy Rating (Eas)
200 mJ
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.181843
$0.181843
10
$0.171550
$1.7155
100
$0.161840
$16.184
500
$0.152679
$76.3395
1000
$0.144037
$144.037
STD17NF03LT4 Product Details
STD17NF03LT4 Description
This power MOSFET STD17NF03LT4 is the latest development of the unique "single feature size" strip process of STMicroelectronics. The resulting transistor has extremely high packing density, low on-resistance, strong and durable avalanche characteristics and less critical alignment steps, so it has significant manufacturing repeatability.