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IRLR120NTRPBF

IRLR120NTRPBF

IRLR120NTRPBF

Infineon Technologies

IRLR120NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR120NTRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 185mOhm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 11A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 85 mJ
Recovery Time 160 ns
Max Junction Temperature (Tj) 175°C
Nominal Vgs 2 V
Height 2.52mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.226342 $0.226342
10 $0.213530 $2.1353
100 $0.201443 $20.1443
500 $0.190041 $95.0205
1000 $0.179284 $179.284
IRLR120NTRPBF Product Details

IRLR120NTRPBF Description


The IRLR120NTRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.



IRLR120NTRPBF Features


  • Advanced process technology

  • Fast switching

  • Fully avalanche rating

  • Low static drain-to-source ON-resistance

  • Dynamic dV/dt rating

  • Logic level



IRLR120NTRPBF Applications


  • Induction furnaces

  • Arc furnaces and arc welders

  • Steel rolling mills

  • Large motors with periodic loading

  • Thyristor drives

  • Railway traction which is mostly through d.c. drives

  • And many loads which may have to be frequently switched


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