IRLR120NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR120NTRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
185mOhm
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
11A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
48W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
48W
Case Connection
DRAIN
Turn On Delay Time
4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
185m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
23 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
2V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
85 mJ
Recovery Time
160 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
2 V
Height
2.52mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.226342
$0.226342
10
$0.213530
$2.1353
100
$0.201443
$20.1443
500
$0.190041
$95.0205
1000
$0.179284
$179.284
IRLR120NTRPBF Product Details
IRLR120NTRPBF Description
The IRLR120NTRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides a highly efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
IRLR120NTRPBF Features
Advanced process technology
Fast switching
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
Logic level
IRLR120NTRPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
And many loads which may have to be frequently switched