IXTN32P60P

new-10%

Manufacturer part number:IXTN32P60P

Manufacturer:IXYS

Description:MOSFET P-CH 600V 32A SOT227

Case Package:SOT-23

Datasheet:IXTN32P60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	PolarP™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	890W
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	32A
Drain-source On Resistance-Max	0.35Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	96A
Avalanche Energy Rating (Eas)	3500 mJ
RoHS Status	ROHS3 Compliant