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FDB6030L

FDB6030L

FDB6030L

ON Semiconductor

FDB6030L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB6030L Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 13MOhm
Technology MOSFET (Metal Oxide)
Current Rating 52A
Number of Elements 1
Power Dissipation-Max 52W Tc
Element Configuration Single
Power Dissipation 52W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 15V
Current - Continuous Drain (Id) @ 25°C 48A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.49000 $0.49
500 $0.4851 $242.55
1000 $0.4802 $480.2
1500 $0.4753 $712.95
2000 $0.4704 $940.8
2500 $0.4655 $1163.75
FDB6030L Product Details

FDB6030L Description


FDB6030L belongs to the family of N-channel logic-level PowerTrench? MOSFETs which are designed based on high-performance trench technology to achieve faster switching speed and lower gate charge. It is specifically designed to improve the overall efficiency of DC-DC converters through either synchronous or conventional switching PWM controllers. 



FDB6030L Features


  • Low gate charge

  • Low RDS(ON)

  • Fast switching speed

  • High-performance trench technology

  • Available in the TO-263AB package



FDB6030L Applications


  • DC-DC converters


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