IRFR825TRPBF

new-10%

Manufacturer part number:IRFR825TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.3 Ω @ 3.7A, 10V ±20V 1346pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

Case Package:SOT-23

Datasheet:IRFR825TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	HEXFET®
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Resistance	1.3Ohm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	119W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	119W
Case Connection	DRAIN
Turn On Delay Time	8.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3 Ω @ 3.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1346pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	6A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	24A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free